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PolarHTTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTQ 140N10P IXTT 140N10P
VDSS ID25
RDS(on)
= =
100 V 140 A 11 m
Symbol VDSS VDGR VGS VGSM ID25 ID(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight
Test Conditions TJ = 25 C to 175 C TJ = 25 C to 175 C; RGS = 1 M Continuous Transient TC = 25 C External lead current limit TC = 25 C, pulse width limited by TJM TC = 25 C TC = 25 C TC = 25 C IS IDM, di/dt 100 A/s, VDD VDSS, TJ 150 C, RG = 4 TC = 25 C
Maximum Ratings 100 100 20 30 140 75 300 60 80 2.5 10 600 -55 ... +175 175 -55 ... +150 V V V V A A A A mJ J V/ns W C C C C C
G = Gate S = Source G S D = Drain TAB = Drain D (TAB)
TO-3P (IXTQ)
G
D
S
(TAB)
TO-268 (IXTT)
1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s Mounting torque TO-3P TO-268 (TO-3P)
300 260
Features
l l
1.13/10 Nm/lb.in. 5.5 5.0 g g
l
International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect
Symbol Test Conditions (TJ = 25 C, unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 A VDS = VGS, ID = 250A VGS = 20 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 175 C
Characteristic Values Min. Typ. Max. 100 3.0 5.0 100 25 500 11 9 V V nA A A m m
Advantages
l l l
Easy to mount Space savings High power density
VGS = 10 V, ID = 0.5 ID25 VGS = 15 V, ID = 300 A Pulse test, t 300 s, duty cycle d 2 %
(c) 2006 IXYS All rights reserved
DS99133E(12/05)
IXTQ 140N10P IXTT 140N10P
Symbol Test Conditions Characteristic Values (TJ = 25 C, unless otherwise specified) Min. Typ. Max. 45 65 4700 VGS = 0 V, VDS = 25 V, f = 1 MHz 1850 600 35 VGS = 10 V, VDS = 0.5 VDSS, ID = 60 A RG = 4 (External) 50 85 26 155 VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 33 85 S pF pF pF ns ns ns ns nC nC nC 0.25C/W (TO-3P) 0.21 C/W TO-3P (IXTQ) Outline
gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCS
VDS= 10 V; ID = 0.5 ID25, pulse test
Source-Drain Diode Symbol IS ISM VSD trr QRM Test Conditions VGS = 0 V Repetitive
Characteristic Values (TJ = 25 C, unless otherwise specified) Min. Typ. Max. 140 300 1.5 120 2.0 A A V ns C TO-268 (IXTT) Outline
IF = IS, VGS = 0 V, Pulse test, t 300 s, duty cycle d 2 % IF = 25 A, -di/dt = 100 A/s VR = 50 V, VGS = 0 V
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692 6,771,478 B2
IXTQ 140N10P IXTT 140N10P
Fig. 1. Output Characteristics @ 25C
140 120 100 VGS = 10V 9V 300 270 240 VGS = 10V
Fig. 2. Extended Output Characteristics @ 25C
I D - Amperes
210
9V
I D - Amperes
80 60
180 150 120 90 60 7V 6V 0 1 2 3 4 6 V D S 5 Volts 7 8 9 10 8V
8V
7V 40 20 6V 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6
30 0
V D S - Volts Fig. 3. Output Characteristics @ 150C
140 120 100 VGS = 10V 9V 2.4 2.2
Fig. 4. RDS(on) Norm alized to 0.5 ID25 Value vs. Junction Tem perature
VGS = 10V
R D S ( o n ) - Normalized
2 1.8 1.6 1.4 1.2 1 0.8 0.6 I D = 140A
I D - Amperes
80 60 40 20 0 0 0.4 0.8 1.2 1.6
8V 7V 6V
I D = 70A
5V
2
2.4
2.8
3.2
V D S - Volts Fig. 5. RDS(on) Norm alized to 0.5 ID25 Value vs. Drain Current
3 2.75
-50
-25
0
TJ - Degrees Centigrade
25
50
75
100
125
150
175
Fig. 6. Drain Current vs. Case Tem perature
90 80 External Lead Current Limit
R D S ( o n ) - Normalized
2.5 2.25 2 1.75 1.5 1.25 1 0.75 0 50 100 VGS = 15V
TJ = 175C
70
I D - Amperes
60 50 40 30 20 10 0
VGS = 10V
TJ = 25C
I D - Amperes
150
200
250
300
350
-50
-25
0
TC - Degrees Centigrade
25
50
75
100
125
150
175
(c) 2006 IXYS All rights reserved
IXTQ 140N10P IXTT 140N10P
Fig. 7. Input Adm ittance
250 225 200 90 80 70
Fig. 8. Transconductance
150 125 100 75 50 25 0 4 4.5 5 5.5 6 6.5 7 7.5 8 8.5 9 9.5 TJ = 150C 25C -40C
g f s - Siemens
175
I D - Amperes
60 50 40 30 20 10 0 0 40 80 120 160 200 240 280 320 TJ = -40C 25C 150C
V G S - Volts Fig. 9. Source Current vs. Source-To-Drain Voltage
300 10 9 250 200 8 7 VDS = 50V I D = 70A I G = 10mA
I D - Amperes Fig. 10. Gate Charge
I S - Amperes
VG S - Volts
TJ = 150C TJ = 25C 0.4 0.6 0.8 1 1.2 1.4 1.6
6 5 4 3 2 1 0
150 100
50 0
V S D - Volts Fig. 11. Capacitance
10000 1000
0
20
40
60
80
100
120
140
160
Q G - nanoCoulombs Fig. 12. Forw ard-Bias Safe Operating Area
TJ = 175C
Capacitance - picoFarads
C iss
R DS(on) Limit
TC = 25C 25s 100s 1ms 10ms
I D - Amperes
1000
C oss
100
C rss f = 1MHz 100 0 5 10 15 10 DC
V DS - Volts
20
25
30
35
40
1
10
V D S - Volts
100
1000
IXYS reserves the right to change limits, test conditions, and dimensions.
IXTQ 140N10P IXTT 140N10P
F ig . 1 3 . M a x im u m T r a n s ie n t T h e r m a l R e s is t a n c e
1.00
R( t h ) J C - C / W
0.10
0.01 0.1 1 10 100 1000
Pu ls e W id th - m illis e c o n d s
(c) 2006 IXYS All rights reserved

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